Hybrid ferroelectric-ionic memristive hardware for high-scalability in-memory computing 用于高可扩展存内计算的铁电-离子复合忆阻器硬件 journalin-memory computingferroelectric
multi-institution (CN/EU)
Nature Communications · 2026-05-21
The team integrates a ferroelectric switching layer with ionic-modulation conductance tuning to break the precision/retention trade-off that has dogged single-mechanism memristors. They report 8-bit analog programmability with retention measured in months at array-relevant temperatures and demonstrate a 64×64 crossbar running matrix-vector products at energy/op figures competitive with leading PCM and ReRAM benchmarks. Caveat: the work is still cell-array scale; tape-out-grade variability statistics (cycle-to-cycle, device-to-device) at million-cell density are not in this paper. 团队将铁电开关层与离子调制电导调节相结合,打破了单机制忆阻器中精度与保持的折中。他们报告了8位模拟可编程性,阵列相关温度下保持时间以月计,并在64×64交叉阵列上演示矩阵-向量乘法,每次操作能耗指标可与领先PCM和ReRAM对标。需注意:该工作仍是单元阵列层级,关于百万单元密度下的量产级波动统计(cycle-to-cycle,device-to-device)尚未在本文给出。