Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM for 2 nm 面向 2 nm 的工艺感知型 Si/IGO 单片三维 6T SRAM
arXiv:2608.22741 · 2026-08-24T02:59:37Z
This work proposes a monolithic-3D 6T SRAM that combines BEOL IGO pass gates with a silicon nanosheet latch, buried power rails and ruthenium interconnects. Its process-aware layout reports a 25% footprint reduction; at the 128×256 subarray level it reports 42.2% lower write delay versus a high-density silicon baseline, based on TCAD and extracted-parasitic analysis rather than fabricated silicon. 该工作提出一种单片三维 6T SRAM,将 BEOL IGO 传输门与硅纳米片锁存器、埋置电源轨和 Ru 互连结合。其工艺感知版图报告面积缩小 25%;在 128×256 子阵列层面,相比高密度硅基线写入延迟降低 42.2%,但结果基于 TCAD 与寄生参数提取分析,尚非实测芯片。