Devices & Process
器件与工艺
Fayssal Mekaret, A. Rabehi, B. Zebentout, et al.
PLoS ONE · 2026-08-21
The authors compare Cowley–Sze, Werner Gaussian-distribution and Tung localized-patch descriptions of Schottky-barrier inhomogeneity in 3C-, 4H- and 6H-SiC. The analysis separates interface-state pinning, statistical barrier variation and localized low-barrier current paths, helping modelers choose a mechanism rather than treating nonideal I–V behavior as a single effect.
作者比较了Cowley–Sze、Werner高斯分布和Tung局域斑块三种模型，用于描述3C、4H和6H-SiC中的肖特基势垒非均匀性。该分析区分了界面态钉扎、势垒统计波动和低势垒局域电流路径，有助于建模者避免将非理想I–V特性归为单一效应。
Lincoln D. Hogan, MD Mazharul Islam, A. Aziz
arXiv:2608.20506 · 2026-08-20
TCAD simulations of AlGaN/GaN HEMTs with integrated diamond heat spreaders reproduce the expected thermal benefit but reveal a countervailing electrostatic effect at the diamond/GaN interface. Band bending and interfacial hole accumulation can alter vertical transport and suppress on-state current, so thermal integration cannot be designed independently of electrostatics.
针对集成金刚石散热层的AlGaN/GaN HEMT的TCAD仿真重现了预期的散热收益，却发现了金刚石/GaN界面的相反静电效应。能带弯曲和界面空穴积累会改变垂直输运并抑制导通电流，因此散热集成不能脱离静电设计而单独优化。
Nuwayyir Alshammari, M. V. Rao, Qiliang Li
Materials · 2026-08-20
This review maps progress in diamond growth, substrates, surface control, dielectrics and device structures for ultrawide-bandgap electronics. It finds the strongest high-voltage evidence in diodes, while transistors remain constrained by threshold control, normally-off operation, contacts, interfaces and reliability.
该综述梳理了面向超宽禁带电子学的金刚石生长、衬底、表面控制、介质和器件结构进展。文中认为二极管在高压能力方面证据最充分，而晶体管仍受阈值控制、常关特性、接触、界面和可靠性限制。
Guoxin Li, Lipeng Luo, Qian Zhang, et al.
ACS Applied Materials and Interfaces · 2026-08-14
The review surveys GaN and transition-metal dichalcogenide heterojunctions for electronics, optoelectronics, sensing and energy conversion. It identifies interface engineering, material synthesis and large-area integration as the common obstacles between attractive device demonstrations and practical deployment.
该综述考察GaN与过渡金属硫族化物异质结在电子、光电子、传感和能量转换中的应用。文中指出，界面工程、材料合成和大面积集成是从有吸引力的器件演示走向实际部署的共同障碍。
Neelu, K. Mazumdar
Frontiers of Physics · 2026-08-11
Using Silvaco ATLAS simulations, this work models a graphene-channel MOS-HEMT with graphene oxide as the gate dielectric. At a reported 1 V threshold it obtains 1,280 mA drain current, about twice the cited GaN comparison, but the result remains a simulation-led device proposal rather than measured hardware.
该工作使用Silvaco ATLAS仿真，以石墨烯为沟道、氧化石墨烯为栅介质构建MOS-HEMT。在报告的1 V阈值下，漏电流达到1,280 mA，约为所引用GaN对照的两倍；但该结果仍是以仿真为主的器件方案，而非实测硬件。