Sc-Composition Sequencing Controls the Structural Stability of Sputter-Epitaxial ScAlN/GaN Multilayers Sc组分排序控制溅射外延ScAlN/GaN多层结构稳定性
Japanese Journal of Applied Physics · 2026-08-20
ScAlN multilayers grown on GaN/6H-SiC remained coherently strained in-plane whether Sc content stepped down toward about 6% or up toward about 22%. The increasing-Sc sequence produced more roughness, needle-like features, and c-axis deviation, while decreasing Sc was structurally more stable. The result is measured by high-resolution X-ray diffraction and reciprocal-space mapping, but it covers short four-step growth sequences under one sputtering condition rather than a manufacturing window. 在GaN/6H-SiC上生长的ScAlN多层结构,无论Sc含量逐步降至约6%还是升至约22%,均保持面内相干应变。Sc递增序列出现更明显的粗糙度、针状表面特征和c轴偏离,而Sc递减序列结构更稳定。结果来自高分辨率X射线衍射和倒易空间映射实测,但仅覆盖单一溅射条件下的四段短时生长,尚不能代表完整制造窗口。