CMOS-compatible bismuth photodetector for SWIR silicon waveguides 面向短波红外硅波导的CMOS兼容铋光电探测器
ACS Photonics · 2026-08-06
The authors directly grow a two-dimensional bismuth film at low temperature in a back-end CMOS-compatible flow to make a waveguide-integrated SWIR detector. At 2200 nm, the device reports about 2 dB/μm absorption, 185.3 mA/W responsivity, and 201.4 nA dark current. Transfer-free growth could make wafer-scale integration more practical, although performance will still need to be tested across full process variation and packaging conditions. 作者采用与CMOS后段工艺兼容的低温直接生长方法,在硅波导上制备二维铋短波红外探测器。器件在2200nm处报告约2 dB/μm吸收系数、185.3 mA/W响应度和201.4 nA暗电流。免转移生长有望提升晶圆级集成可制造性,但仍需在完整工艺波动和封装条件下验证其性能。