GaN & AlN Device Physics
GaN与AlN器件物理
Donghan Kim, J. Choe, Sangmin Lee, Daniel Hou, Shahid Nawaz, Jungho Lee, et al.
IEEE Electron Device Letters · 2026-06-01
This paper reports AlGaN/GaN HEMTs on an AlN buffer over SiC with 64.2% PAE and 6.27 W/mm output power density at 10 GHz. The key contribution is not only RF output; the low buffer leakage and low current-collapse ratio suggest the epitaxy and buffer stack are doing real reliability work. That makes it relevant to defense and satellite X-band power amplifiers where efficiency and stable elevated-voltage operation both matter.
该论文报道了在SiC衬底AlN缓冲层上的AlGaN/GaN HEMT，在10 GHz下实现64.2% PAE和6.27 W/mm输出功率密度。关键贡献不只是RF输出，低缓冲漏电和低电流坍塌比例说明外延与缓冲堆栈在可靠性上发挥了实质作用。因此它与防务和卫星X波段功率放大器高度相关，因为效率和高电压稳定运行同样重要。
Seokjun Kim, Eungkyun Kim, J. Singhal, J. Encomendero, D. Jena, H. Xing, Sukwon Choi
IEEE Electron Device Letters · 2026-06-01
The authors demonstrate an AlN/AlGaN/AlN-on-SiC HEMT platform with roughly 20% lower channel temperature rise than today's GaN-on-SiC HEMTs. That is a system-level result disguised as a device paper: ultrawide-bandgap electronics can only use their electrical headroom if the heat path is solved. Raman thermometry plus 3D thermal modeling makes the work useful as design guidance, not just a one-off device claim.
作者展示了AlN/AlGaN/AlN-on-SiC HEMT平台，沟道温升较当前GaN-on-SiC HEMT低约20%。这是一篇器件论文包装下的系统级结果：超宽禁带电子只有在热路径被解决时才能真正利用其电性能余量。Raman测温结合3D热建模，让这项工作更像设计指导，而不只是单个器件指标。
Rahul Rai, Viet Quoc Ho, Khanh Quoc Nguyen, Hao-Chun Kuo, Edward Yi Chang
APL Electronic Devices · 2026-05-26
This work demonstrates normally-off tri-gate GaN MIS-HEMTs using a PEALD-AlN/HfO2 dual-gate dielectric. The reported threshold voltage, high on/off ratio and mobility show why tri-gate control is attractive for power devices that need both safety and performance. The extra value is the NBTI and trap analysis, because threshold stability often decides whether a promising GaN device can become a product.
这项工作用PEALD-AlN/HfO2双栅介质实现常关型三栅GaN MIS-HEMT。其阈值电压、高开关比和迁移率说明，三栅控制对同时要求安全性和性能的功率器件很有吸引力。更有价值的是NBTI和陷阱分析，因为阈值稳定性往往决定一款有前景的GaN器件能否产品化。
Power Conversion & Protection
功率转换与保护
Zhiqing Yang, Ming Xiao, Yuhao Zhang, Zihan Lin, Xi Liu, Kui Dang, Xiufeng Song, Shenglei Zhao, Kai Su, Z. Ren, Jinfeng Zhang, Yue Hao
IEEE Electron Device Letters · 2026-06-01
The GaN diode avalanche shaper delivers more than 2.5 kV peak output with a 93 ps rise time and a reported 1.68 GW/cm2 peak power density. The result pushes GaN into compact ultrafast pulsed-power territory where Si and GaAs devices struggle on current density and bandwidth. The caveat is application specificity, but for high-repetition-rate pulsed systems the device-level advantage is clear.
该GaN二极管雪崩整形器输出峰值超过2.5 kV，上升时间93 ps，峰值功率密度达1.68 GW/cm2。这一结果把GaN推进到紧凑型超快脉冲功率领域，而Si和GaAs器件在电流密度与带宽上更吃力。局限是应用较专门，但对高重复频率脉冲系统而言，器件级优势很清楚。
Qiling Chen, Hong Zhang, Dingkun Ma, Tianshu Yuan, Peiyang Ding, Jiacheng Guo, Lei Li, Yisen Lv, Peiyuan Sun, Laili Wang, Yongmei Gan
IEEE Transactions on Power Electronics · 2026-06-01
The paper proposes Qdesat-transfer short-circuit protection for high-voltage SiC MOSFETs with strong dv/dt noise immunity. This is the kind of circuit work that makes wide-bandgap devices usable in real converters, where fast switching creates its own sensing problems. The scheme combines gate-charge and desaturation ideas to reduce blanking-time constraints without depending on fragile transient dv/dt measurements.
该论文提出面向高压SiC MOSFET的Qdesat-transfer短路保护方案，并强调强dv/dt噪声免疫。这类电路工作决定宽禁带器件能否在真实变换器中好用，因为高速开关本身会制造感测难题。该方案结合栅电荷与去饱和思路，降低blanking time约束，同时避免依赖脆弱的瞬态dv/dt测量。
Yushi Wang, Zhaobo Zhang, Renze Yu, S. Jahdi, Bernard H. Stark
IEEE Transactions on Power Electronics · 2026-06-01
The authors design coreless twin-coil magnetic current sensors for compact SiC and GaN switching circuits, reporting bandwidth up to hundreds of MHz. Measurement is becoming a bottleneck as converter switching edges accelerate; intrusive sensors distort the very transient they are meant to capture. The paper's orientation and immunity design method is useful because it treats sensing as a layout problem, not only a component choice.
作者为紧凑SiC与GaN开关电路设计无磁芯双线圈磁电流传感器，带宽达到数百MHz。随着变换器开关沿加快，测量本身正在成为瓶颈；侵入式传感器会扭曲它想捕捉的瞬态。论文中的方向和抗干扰设计方法有价值，因为它把感测视为布局问题，而不只是元件选择。
SiC Manufacturing & Interfaces
SiC制造与界面
Jian Zhang, Bi Xue Li, Qiu Chen, Linlin Che, Xing Zhang, Haoyu Fan, Yangyang Jia, Jia Wang, Yu Xue, Rongkun Wang, Xiufang Chen
Materials Science Forum · 2026-05-21
This study examines how repeated laser-processing passes affect crack propagation and delamination strength in SiC slicing. The manufacturing angle matters because kerf-free or low-loss SiC wafering can directly affect substrate cost for power electronics. The result is not a finished production flow, but it gives a processing window for balancing wafer separation, surface integrity and material loss.
这项研究考察激光加工次数如何影响SiC切片中的裂纹扩展和分层强度。制造意义在于，无切缝或低损耗SiC晶圆加工会直接影响功率电子衬底成本。结果还不是完整量产流程，但给出了在晶圆分离、表面完整性和材料损耗之间取平衡的工艺窗口。
Bongmook Lee, Veena Misra
Materials Science Forum · 2026-05-20
The paper uses ALD Al2O3/SiO2 interface dipole engineering to shift threshold voltage in 4H-SiC MOS devices without degrading field-effect mobility. That is a subtle but important knob for SiC power MOSFETs, where high threshold voltage and channel mobility often trade against each other. Interface engineering of this kind is especially relevant when thermal oxide growth is not the best path for future device stacks.
该论文利用ALD Al2O3/SiO2界面偶极工程调节4H-SiC MOS器件阈值电压，同时不降低场效应迁移率。对SiC功率MOSFET而言，这是一个细小但重要的调节旋钮，因为高阈值电压和沟道迁移率常常互相牵制。当热氧化不再是未来器件堆栈的最佳路径时，这类界面工程尤其有意义。