Orbital and spin-orbit torque interplay in Ta/W magnetic tunnel junctions with vertical non-local switching Ta/W磁隧道结中轨道与自旋轨道力矩的相互作用与垂直非局域开关 preprintMRAMdevice physics
MRAM research consortium
arXiv:2605.27215 · 2026-05-26
SOT-MRAM has been stalled at ~45% charge-to-spin conversion efficiency (ξ_DL), well below the ~80% needed to compete with advanced transistor nodes for cache memory. This work reports a four-fold increase in spin-orbit torque from a Ta/W bilayer system by exploiting orbital current contributions from Ta — moving the technology meaningfully closer to the write-energy figures cache-level MRAM actually needs. The result is a device-physics step, not a tape-out, but it changes which materials systems show up in mainstream SOT-MRAM roadmaps over the next 24 months. SOT-MRAM长期卡在约45%的电荷-自旋转换效率(ξ_DL),远低于与先进晶体管节点竞争所需的约80%(用于缓存级存储)。本文报告利用Ta层的轨道电流贡献,Ta/W双层体系将自旋轨道力矩提升4倍——使该技术显著靠近缓存级MRAM真正需要的写入能耗指标。这是器件物理层级的进展、并非量产流片,但会改变未来24个月主流SOT-MRAM路线图上出现的材料体系。