Samsung ships industry-first HBM4E samples — 3.6 TB/s, six months ahead of SK hynix 三星送出业界首批HBM4E样品：3.6 TB/s带宽，较SK海力士领先六个月
Samsung confirmed shipment of the first HBM4E samples to lead customers at 3.6 TB/s per stack — roughly 30% above HBM4 and a meaningful lead window over SK hynix, whose HBM4E samples weren't expected until late 2026 or early 2027. The combination of P4-line conversion (covered last week as a 2027 DRAM-supply risk) and a real bandwidth lead reframes Samsung's position: from the memory vendor visibly behind SK hynix in HBM3E to the credibly-first vendor on HBM4E. For Nvidia's Rubin generation roadmap — and especially the Rubin CPX variant whose substrate/memory orders failed to materialize earlier this month — this changes which memory supplier is the gating partner. 三星确认向头部客户出货首批HBM4E样品，单堆叠带宽达3.6 TB/s——较HBM4高出约30%，且明显领先SK海力士（其HBM4E样品原计划要到2026年底或2027年初才出）。叠加P4厂的产能转换（上周报道的2027年DRAM供应风险）与真实带宽领先，三星在存储格局中的地位被改写：从在HBM3E上明显落后SK海力士，变成HBM4E首发的可信厂商。对英伟达Rubin代路线图——尤其是本月早些时候基板/存储订单未能落地的Rubin CPX变体——这改变了关键存储供应商的人选。